Dependence of optical gain on crystal orientation in surface-emitting lasers with strained quantum wells

• T. Ohtoshi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan

• T. Kuroda

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan

• A. Niwa

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan

• S. Tsuji

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan

抄録

We analyze theoretically optical gains in vertical-cavity surface-emitting lasers (VCSELs) for various crystal orientations. The calculation based on the multiband effective-mass theory takes into account the effects of anisotropy and nonparabolicity on the valence subband dispersion. It is found that in VCSELs employing InGaAs/InP strained quantum wells (QWs) with non-(001) orientations except (111), the polarization in the QW plane can be controlled and high gains are obtained. In particular, the gains in VCSELs with (NN1)-oriented (N≥2) strained QWs are markedly higher than those in the equivalent (001) lasers.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 65 (15), 1886-1887, 1994-10-10

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1362544420480960640
• NII論文ID: 30015781834
• DOI: 10.1063/1.112878
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/65/15/1886/18507274/1886_1_online.pdf
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