Space-charge-limited charge injection from indium tin oxide into a starburst amine and its implications for organic light-emitting diodes

DOI PDF 被引用文献5件
  • Carsten Giebeler
    Hewlett Packard Laboratories, Palo Alto, California 94304
  • Homer Antoniadis
    Hewlett Packard Laboratories, Palo Alto, California 94304
  • Donal D. C. Bradley
    Department of Physics, The University of Sheffield, Sheffield S3 7RH, Great Britain
  • Yasuhiko Shirota
    Department of Applied Chemistry, Faculty of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565, Japan

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<jats:p>We have investigated the hole-injection characteristics from indium tin–oxide (ITO) into 4,4′,4″-tris{N,-(3-methylphenyl)-N-phenylamino}triphenylamine (m-MTDATA) and have measured the hole-carrier drift mobility of this compound in single-layer ITO/m-MTDATA/Au structures. We have found that ITO is able to provide trap-free space-charge-limited currents over a wide range of film thicknesses and have established unambiguously that the ITO/m-MTDATA is an ideal Ohmic contact at high electric fields. Our observations clarify the role of m-MTDATA as a voltage-lowering hole-injecting buffer layer in organic light-emitting diodes.</jats:p>

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