175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

DOI PDF 被引用文献18件
  • N. Tezuka
    Tohoku University Department of Materials Science, Graduate School of Engineering, , Aobayama 6-6-02, Sendai 980-8579, Japan and , Saitama 332-0012, Japan
  • N. Ikeda
    Tohoku University Department of Materials Science, Graduate School of Engineering, , Aobayama 6-6-02, Sendai 980-8579, Japan
  • S. Sugimoto
    Tohoku University Department of Materials Science, Graduate School of Engineering, , Aobayama 6-6-02, Sendai 980-8579, Japan
  • K. Inomata
    National Institute for Materials Science , 1-2-1, Sengen, Tsukuba 305-0047, Japan and , 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012, Japan

抄録

<jats:p>The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L21-Co2FeAl0.5Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO=1.5nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350°C and then decrease by annealing, while for tMgO=2.0 and 2.5nm, the TMR ratio increases with annealing temperature and peaks around 500°C. The TMR ratio up to 175% at RT and thermal stability up to 500°C have been achieved for tMgO=2.0nm, suggesting the large tunneling spin polarization and high thermal stability for Co2FeAl0.5Si0.5 with L21 structure.</jats:p>

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