Strain-induced insulator–metal transition and room-temperature colossal magnetoresistance in low-doped La1−xBaxMnO3 thin films

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  • Jun Zhang
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Hidekazu Tanaka
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • Tomoji Kawai
    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Abstract

<jats:p>Magnetotransport properties in low-doped La1−xBaxMnO3 thin films were investigated. The bulk La1−xBaxMnO3 (x=0.05 and 0.1) compounds are insulating, but an insulator–metal transition was observed in the strained thin films deposited on SrTiO3(100) substrates. At x=0.05, magnetization measurements revealed a transition from spin canting in bulk to ferromagnetic order in thin film. Moreover, a large magnetoresistance effect was obtained in the thin film with x=0.1 at room temperature and in a low magnetic field. A strain-induced modification of eg orbital stability was proposed to explain these properties.</jats:p>

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