Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates
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- P. Kung
- Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
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- C. J. Sun
- Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
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- A. Saxler
- Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
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- H. Ohsato
- Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
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- M. Razeghi
- Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston, Illinois 60208
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抄録
<jats:p>In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00⋅1)Al2O3 have a better epilayer-substrate interface quality than those grown on (01⋅2)Al2O3. We also show the epilayer grown on (00⋅1)Al2O3 are gallium-terminated, and both (00⋅1) and (01⋅2) surfaces of sapphire crystals are oxygen-terminated.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 75 (9), 4515-4519, 1994-05-01
AIP Publishing
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詳細情報
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- CRID
- 1363951794823689600
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- NII論文ID
- 30015828088
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- NII書誌ID
- AA00693547
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- DOI
- 10.1063/1.355943
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- ISSN
- 10897550
- 00218979
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