Interfacial reactions of iron thin films on silicon

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  • H. C. Cheng
    Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
  • T. R. Yew
    Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
  • L. J. Chen
    Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China

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<jats:p>Interfacial reactions of iron thin films on silicon have been investigated by transmission electron microscopy. FeSi was found to form after 400 °C annealing. Small amount of Fe3Si was detected in samples annealed at 450 to 500 °C. β-FeSi2 grains were predominant with a few FeSi grains remained in samples annealed at 600 °C. β-FeSi2 was found to be the dominant phase, whereas α-FeSi2 was predominant in samples annealed at 900–1100 °C in N2 ambient and in vacuum, respectively. Two-step annealings were effective in promoting the growth and improving the quality of epitaxial FeSi2. More uniform growth of epitaxial FeSi2 was observed for samples annealed in vacuum than those heat treated in N2 ambient. The mechanisms of epitaxial growth and the influence of impurities on the interfacial reactions are discussed.</jats:p>

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