Optical properties of semiconducting iron disilicide thin films

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  • M. C. Bost
    Department of Electrical Engineering and Condensed Matter Sciences Laboratory, Colorado State University, Fort Collins, Colorado 80523
  • J. E. Mahan
    Department of Electrical Engineering and Condensed Matter Sciences Laboratory, Colorado State University, Fort Collins, Colorado 80523

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<jats:p>Iron disilicide thin films were prepared by furnace reaction of ion beam sputtered iron layers with single-crystal silicon wafers and with low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films. X-ray diffraction indicates the films are single-phase, orthorhombic, β-FeSi2. Impurity levels are below the detection limit of Auger spectroscopy. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.87 eV. The apparent thermal activation energy of the resistivity in the intrinsic regime is about half of this minimum optical gap. With such a direct band gap, the material may be suitable for the development of both light-sensitive and light-emitting thin-film devices within the silicon microelectronics technology.</jats:p>

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