Direct measurement of the energy distribution of hot electrons in silicon dioxide

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  • S. D. Brorson
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • D. J. DiMaria
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • M. V. Fischetti
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • F. L. Pesavento
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • P. M. Solomon
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • D. W. Dong
    IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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<jats:p>The energy distribution of hot electrons in high-field stressed amorphous silicon dioxide (SiO2) films have been measured using a vacuum emission technique. Electrons having average energies ≳2 eV and an energy relaxation length of λ≊32 Å are observed at all fields studied (≳ 2 MV/cm). However, contrary to previous theoretical expectations, the majority of carriers in the distribution remains stable at all fields. The results are in agreement with other recent experiments (electroluminescence and carrier separation) which only measure the average energy of hot electrons in SiO2 and with recent Monte Carlo transport calculations which include scattering by both optical and acoustic phonon modes. Results for varying SiO2 thickness, metal gate thickness, oxide composition, and metal gate composition will be discussed.</jats:p>

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