Ferrite-organic multilayer film for microwave monolithic integrate circuits prepared by ferrite plating based on the spray-spin-coating method

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  • M. Abe
    Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152, Japan
  • T. Itoh
    Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152, Japan
  • Y. Tamaura
    Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152, Japan
  • M. Gomi
    Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152, Japan

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<jats:p>We have made multilayer films in which NiZn-ferrite (Fe2.70±0.04-Ni0.14±0.03 Zn0.14±0.03O4) layers (2000–8000 Å thick) and dextran [(C6H10O5)1200–1800] buffer layers (100 Å thick) are laminated alternately on a glass substrate. The ferrite layers were formed by ferrite plating based on the spray-spin-coating method at 80 °C, compatible with the low heat resistance (∼300 °C) of GaAs microwave monolithic integrated circuits. To enhance the adhesive power of the multilayer film, thin (∼300 Å) magnetite layers were deposited intermediate between the NiZn-ferrite and dextran and also between the NiZn-ferrite and the substrate. The grain growth in the ferrite layers is interrupted at the dextran buffer layers, which release the stress induced in the ferrite layers. Thus the multilayer film can grow much thicker (i.e., up to ∼5 μm) than a NiZn-ferrite monolayer film which peels off at ∼1.5 μm thickness due to the stress. In the multilayer films, the ferrite layers are of polycrystalline spinel structure having no preferred orientation. The magnetization does not exhibit an anisotropy, lying in the plane of film.</jats:p>

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