Generation of several kinds of oxygen-related thermal donors around 520 °C in Czochralski silicon

• Yoichi Kamiura

  Faculty of Engineering, Okayama University, Okayama 700, Japan

• Fumio Hashimoto

  Faculty of Engineering, Okayama University, Okayama 700, Japan

• Minoru Yoneta

  Faculty of Engineering, Okayama University, Okayama 700, Japan

Abstract

We have found that at least four kinds of oxygen-related thermal donors are distinguishable by their deep-level transient spectroscopy peaks and generation kinetics around 520 °C for 10–106 min in phosphorus-doped Czochralski silicon. Each kind of thermal donors successively appeared with its preceding kind decaying. The first appearing kind is identified as a family of thermal donors that have been most studied by many investigators. It is suggested that several kinds of thermal donors arise from various oxygen clusters with different sizes and thermal stabilities.

Journal

• Journal of Applied Physics

  Journal of Applied Physics 66 (8), 3926-3929, 1989-10-15

  AIP Publishing

Keywords

• General Physics and Astronomy

Details

• CRID: 1363951793279132160
• NII Article ID: 30015836081
• NII Book ID: AA00693547
• DOI: 10.1063/1.344018
• ISSN: 10897550
• ISSN: 00218979
• Web Site: https://pubs.aip.org/aip/jap/article-pdf/66/8/3926/18628380/3926_1_online.pdf
• Data Source:
  • Crossref
  • CiNii Articles