Characterization and depth profiling of <i>E</i>′ defects in buried SiO2

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  • K. Vanheusden
    Department of Physics, Katholieke Universiteit Leuven, 3001 Leuven, Belgium
  • A. Stesmans
    Department of Physics, Katholieke Universiteit Leuven, 3001 Leuven, Belgium

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<jats:p>Oxygen-vacancy defects (E′) generated at the surface of buried SiO2 (BOX) layers formed by O+ implantation during the separation by implantation of oxygen process have been studied by electron spin resonance at 4.3 K. The E′ generation tool used was exposure to a dc Ar glow discharge that produces E′ defects predominantly in a surface layer of ≊100-Å thick, reaching local volume densities at the surface up to 8×1019 cm−3. This glow discharge exposure, alternated with step-by-step etch back, allowed mapping of the defect generation sensitivity depth profile for the entire buried layer, revealing a fairly uniform sensitivity with a strong decline towards the BOX/substrate interface. Besides the usual E′γ signal, the E′δ center—a delocalized variant of the E′ center—has been newly observed in the BOX. Reoxidation (950 °C; 1.1 atm O2) of the BOX was observed to reduce the E′ sensitivity close to that of regular dry thermal oxide (≥29 times lower), while the E′δ signal could no longer be generated—again similar to conventional thermal oxide. These data suggest an adapted model for the E′δ defect, based on the existence of small Si clusters (≳5 atoms) in the BOX serving as defect precursors. Generally, the results imply that the buried oxide contains excess Si, exceedingly so near the BOX/substrate interface.  </jats:p>

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