A simple method for determining band-gap energies from inhomogeneous electric field electroreflection spectra applied to GaAs

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  • H. Poras
    Department of Physics, Boston College, Chestnut Hill, Massachusetts 02167
  • H. Wang
    Department of Physics, Boston College, Chestnut Hill, Massachusetts 02167
  • G. J. Goldsmith
    Department of Physics, Boston College, Chestnut Hill, Massachusetts 02167
  • N. Pan
    Raytheon Company, Research Division, 131 Spring Street, Lexington, Massachusetts 02137

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<jats:p>A new method for determining band-gap energies using modulation spectroscopy is described. In contrast to the usual method for extracting transition energies from modulation spectra, which assumes a constant electric field distribution, this method pertains to cases where an inhomogeneous field exists. The band-gap determination applied herein to GaAs epilayers between 100 and 380 K takes advantage of a modulation feature arising from an inhomogeneous distribution of the electric field. This approach is quick, applicable over a wide temperature range, and does not necessitate curve fitting.</jats:p>

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