Dielectric, ferroelectric, and piezoelectric properties of lead zirconate titanate thick films on silicon substrates

DOI PDF 被引用文献22件
  • H. D. Chen
    Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
  • K. R. Udayakumar
    Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
  • L. E. Cross
    Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
  • J. J. Bernstein
    The Charles Stark Draper Laboratory, 555 Technology Square, Cambridge, Massachusetts 02139
  • L. C. Niles
    The Charles Stark Draper Laboratory, 555 Technology Square, Cambridge, Massachusetts 02139

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<jats:p>This article reports the fabrication of thick films of lead zirconate titanate (PZT) on platinum-buffered silicon substrates by screen printing. Crack-free films, up to 12 μm on a single pass, show a dielectric permittivity of 200, tangent losses of 0.05, remanent polarization of 2.5 μC/cm2, and coercive field of 40 kV/cm. The field-induced longitudinal piezoelectric coefficient d33 at 40 kV/cm dc bias and 4 kV/cm alternating field corresponded to 50 pC/N. The magnitude of the piezoelectric voltage coefficient g33, computed from the strain coefficient and dielectric permittivity, under the same conditions, was found to be 36×10−3 V m/N, higher than that of a poled PZT bulk ceramic in comparison. These results are promising for a broad variety of sensor applications.</jats:p>

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