Molecular-beam-epitaxial growth of III-VI layered semiconductor GaSe on amorphous SiO2
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- N. Kambe
- NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
抄録
<jats:p>Crystalline thin films of III-VI layered semiconductor GaSe have been grown on amorphous SiO2 substrates using molecular-beam-epitaxy techniques. This attests possible formation of a crystalline/noncrystalline heterostructure when inactive GaSe surfaces are involved. Reflection-high-energy-electron-diffraction and (00ℓ ) x-ray diffraction results show in-plane and stacking ordering, respectively. Although the coexistence of multiple crystalline domains in plane is suggested, the photoluminescence spectra are comparable to those of a GaSe bulk single crystal. Excitonic emission with the full-width at the half magnitude of 5 nm (19 meV) is observed at 591 nm (2.10 eV) at 77 K.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 69 (4), 2697-2699, 1991-02-15
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360855569165612416
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- NII論文ID
- 30015846110
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- DOI
- 10.1063/1.348671
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- ISSN
- 10897550
- 00218979
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- データソース種別
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