Kinetic analysis of C49-TiSi2 and C54-TiSi2 formation at rapid thermal annealing rates

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  • L. A. Clevenger
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • J. M. E. Harper
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • C. Cabral
    IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • C. Nobili
    Universitá Degli Studi Di Modena, Modena, Italy
  • G. Ottaviani
    Universitá Degli Studi Di Modena, Modena, Italy
  • R. Mann
    IBM Technology Products, Essex Junction, Vermont 05452

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<jats:p>We have used in situ resistance versus temperature measurements to demonstrate that a 60 nm titanium thin film on polycrystalline silicon heated at rates up to 3000 °C/min always forms high-resistivity base-centered orthorhombic C49-TiSi2 before the low-resistivity face-centered orthorhombic C54-TiSi2 phase. Kinetic analysis of the shift in transformation temperatures with heating rate indicates that the activation energies for the formation of C49-TiSi2 and C54-TiSi2 are 2.1±0.2 and 3.8±0.5 eV, respectively, when formed during the same annealing cycle. The higher activation energy of formation of C54-TiSi2 as compared to C49-TiSi2 suggests that under very high heating rates and annealing temperatures, the formation of C49-TiSi2 before C54-TiSi2 might be completely or partially bypassed.</jats:p>

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