Scanning tunneling microscope with gallium arsenide microtip fabricated by selective epitaxial growth

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  • Koichi Yamaguchi
    Department of Electronic Engineering, University of Electro-Communications, 1-5-1, Chofugaoka, Chofu-shi, Tokyo 182, Japan
  • Kotaro Okamoto
    Department of Electronic Engineering, University of Electro-Communications, 1-5-1, Chofugaoka, Chofu-shi, Tokyo 182, Japan
  • Shigemi Yugo
    Cooperative Research Center, University of Electro-Communications, 1-5-1, Chofugaoka, Chofu-shi, Tokyo 182, Japan

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<jats:p>GaAs microtip for scanning tunneling microscope was fabricated by selective metalorganic chemical vapor deposition. The GaAs tip was constructed by two {111}B growth facets and a cleaved (110) surface. The surface of the GaAs tip was treated by ammonium sulfide solution, and highly oriented pyrolytic graphite surfaces were observed by using the GaAs tip in air. As the result, imagings of the atomic arrangement could be successfully obtained.</jats:p>

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