The photonic band edge laser: A new approach to gain enhancement

DOI PDF 被引用文献26件
  • Jonathan P. Dowling
    Weapons Sciences Directorate, AMSMI-RD-WS, Research, Development, and Engineering Center, U. S. Army Missile Command, Redstone Arsenal, Alabama 35898-5248
  • Michael Scalora
    Weapons Sciences Directorate, AMSMI-RD-WS, Research, Development, and Engineering Center, U. S. Army Missile Command, Redstone Arsenal, Alabama 35898-5248
  • Mark J. Bloemer
    Weapons Sciences Directorate, AMSMI-RD-WS, Research, Development, and Engineering Center, U. S. Army Missile Command, Redstone Arsenal, Alabama 35898-5248
  • Charles M. Bowden
    Weapons Sciences Directorate, AMSMI-RD-WS, Research, Development, and Engineering Center, U. S. Army Missile Command, Redstone Arsenal, Alabama 35898-5248

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<jats:p>Near the band edge of a one-dimensional photonic band gap structure the photon group velocity approaches zero. This effect implies an exceedingly long optical path length in the structure. If an active medium is present, the optical path length increase near the photonic band edge can lead to a better than fourfold enhancement of gain. This new effect has important applications to vertical-cavity surface-emitting lasers.</jats:p>

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