Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs

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  • T. Hayashi
    Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
  • M. Tanaka
    Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
  • T. Nishinaga
    Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
  • H. Shimada
    Cryogenic Center, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113, Japan

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Abstract

<jats:p>We have studied magnetic and magnetotransport properties of novel III-V diluted magnetic semiconductors, (Ga1−xMnx)As. The GaMnAs thin films were grown on GaAs(001) substrates by low temperature molecular beam epitaxy. We present magnetoresistance, extraordinary Hall effect, and M–H characteristics of two (Ga1−xMnx)As samples having different Mn content x.</jats:p>

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