Formation of c-axis oriented barium ferrite thin films by alternate deposition of a Fe3O4 layer and BaO⋅3Fe2O3 layer

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  • Y. Hoshi
    Tokyo Institute of Polytechnics, 1583 Iiyama, Atsugi, Kanagawa 243-02, Japan
  • Y. Kubota
    Tokyo Institute of Polytechnics, 1583 Iiyama, Atsugi, Kanagawa 243-02, Japan
  • H. Onodera
    Tokyo Institute of Polytechnics, 1583 Iiyama, Atsugi, Kanagawa 243-02, Japan
  • H. Shinozaki
    Tokyo Institute of Polytechnics, 1583 Iiyama, Atsugi, Kanagawa 243-02, Japan
  • H. Shimizu
    Niigata University, Niigata 950-21, Japan
  • H. Ikawa
    Kanagawa Institute of Technology, Atsugi, Kanagawa 243, Japan

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<jats:p>Deposition of c-axis perpendicularly oriented barium ferrite (BaM:BaFe12O19) thin films was attempted by means of an alternate periodic deposition of S (spinel Fe3O4) and R (BaO⋅3Fe2O3) layers. The period of the layers was fixed at 1.15 nm, which corresponds to the period of hexagonal barium ferrite crystals in the c-axis direction. Films 115 nm thick were deposited on a c-axis oriented ZnO underlayer by using a dc sputtering system with three facing target sputtering sources. This layer deposition method was expected to deposit a film with much better crystallite orientation at a lower substrate temperature than needed to deposit a film when using a conventional sputter deposition method (i.e., sputter deposition using a stoichiometric BaM sintered target). The films deposited at temperatures above 540 °C had a hexagonal crystal structure and showed c-axis orientation, but this deposition method did not result in a marked reduction of substrate temperature needed for the deposition of a BaM film with hexagonal crystal structure. The films deposited at 650 °C had a clear terraced surface due to the growth of disk shaped hexagonal crystallites. The saturation magnetization of the film was about 220 emu/cc and the coercive force of the films was about 2.2 kOe.</jats:p>

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