Spatially resolved near-field spectroscopy on localized GaInAsP/InP double heterostructures
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- J. Barenz
- Department of Experimental Physics, University of Ulm, D-89069 Ulm/Donau, Germany
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- P. Anger
- Department of Experimental Physics, University of Ulm, D-89069 Ulm/Donau, Germany
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- O. Hollricher
- Department of Experimental Physics, University of Ulm, D-89069 Ulm/Donau, Germany
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- O. Marti
- Department of Experimental Physics, University of Ulm, D-89069 Ulm/Donau, Germany
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- M. Wachter
- Department of Semiconductor Physics, University of Ulm, D-89069 Ulm/Donau, Germany
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- R. Butendeich
- Department of Semiconductor Physics, University of Ulm, D-89069 Ulm/Donau, Germany
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- H. Heinecke
- Department of Semiconductor Physics, University of Ulm, D-89069 Ulm/Donau, Germany
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Abstract
<jats:p>We present investigations of band-gap variations on selective grown GaxIn1−xAsyP1−y multiple quantum wells (MQW, Q1.05) using near-field optical microscopy. The MQW is excited with the near-field probe and the luminescence is collected through the same tip. By this mode, we are able to detect variation of the band gap with a lateral resolution of about 550 nm at a luminescence wavelength of 1115 nm. We show a spatial band-gap modulation near the (0–11) facet of the selective grown structures, which we suggest, is a result of a variation of the material composition. Furthermore, together with the simultaneously recorded topography, we are able to allocate a recombination path at a center wavelength of λ=1115 nm to the intersection of the (01–1) and (11–1) vertical side facets, which are formed by interfacet diffusion during surface selective growth of the GaxIn1−xAsyP1−y MQW.</jats:p>
Journal
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- Journal of Applied Physics
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Journal of Applied Physics 83 (2), 870-876, 1998-01-15
AIP Publishing
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Details 詳細情報について
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- CRID
- 1360018294496202368
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- NII Article ID
- 30015857534
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- NII Book ID
- AA00693547
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- DOI
- 10.1063/1.366770
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- ISSN
- 10897550
- 00218979
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