Arsenic precipitation at dislocations in GaAs substrate material

• A. G. Cullis

  Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, England

• P. D. Augustus

  Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Caswell, Towcester, Northants. NN12 8EQ, England

• D. J. Stirland

  Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Caswell, Towcester, Northants. NN12 8EQ, England

抄録

High-resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 Å-diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the gallium arsenide matrix. Precipitates were observed in a range of semi-insulating, p-type, and n-type material and were not dependent on the presence of specific additional dopants for their occurrence. The way in which the particles may originate is discussed.

収録刊行物

• Journal of Applied Physics

  Journal of Applied Physics 51 (5), 2556-2560, 1980-05-01

  AIP Publishing

キーワード

• General Physics and Astronomy

詳細情報

• CRID: 1360861293691814144
• NII論文ID: 30015873848
• NII書誌ID: AA00693547
• DOI: 10.1063/1.327979
• ISSN: 10897550
• ISSN: 00218979
• Web Site: https://pubs.aip.org/aip/jap/article-pdf/51/5/2556/18388524/2556_1_online.pdf
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