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- Martin Hudis
- General Electric Company, Schenectady, New York 12301
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<jats:p>A study of ion nitriding has been conducted in a nitrogen-hydrogen-argon gas mixture with emphasis on the mechanism and the active plasma ingredients which cause nitriding. The study is based on mass and energy data of ions sampled through a 4-mil hole in the cathode, metallurgical data, and gas-absorption data. The results of the experiment demonstrate that ion nitriding is not a gas-absorption process. Ion nitriding requires ionic bombardment. Nitrogen ions and nitrogen-hydrogen molecular ions are the active plasma ingredients. Nitrogen-hydrogen molecular ions are responsible for the superior nitriding properties produced by a nitrogen-hydrogen plasma compared to the properties produced by a nitrogen or nitrogen-noble gas mixture.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 44 (4), 1489-1496, 1973-04-01
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360011143621150080
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- NII論文ID
- 30015885608
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- NII書誌ID
- AA00693547
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- ISSN
- 10897550
- 00218979
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