Ohmic Contacts to Solution-Grown Gallium Arsenide

DOI PDF 被引用文献7件
  • J. S. Harris
    Solid-State Electronics Laboratory, Stanford University, Stanford, California 94305
  • Y. Nannichi
    Solid-State Electronics Laboratory, Stanford University, Stanford, California 94305
  • G. L. Pearson
    Solid-State Electronics Laboratory, Stanford University, Stanford, California 94305
  • G. F. Day
    Central Research Laboratories, Varian Associates, Palo Alto, California 94303

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<jats:p>A study has been made on the properties of Ohmic contacts to single-crystal n-type GaAs wafers which were grown by liquid epitaxy techniques. Carrier concentration profiles at the n+-n junctions were measured by the Schottky barrier capacitance technique for both Au-Ge-Ni alloyed contacts and liquid epitaxial n+ contacts. The frequently observed high resistance layers at the interface were eliminated by the contacting processes described here. The Ohmic contact problems and the results of other experiments are explained in terms of the GaAs binary phase diagram and nonstoichiometry considerations.</jats:p>

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