Electronic structure of the deep boron acceptor in boron-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>-SiC

• A. v. Duijn-Arnold

• T. Ikoma

• O. G. Poluektov

• P. G. Baranov

• E. N. Mokhov

• J. Schmidt

収録刊行物

• Physical Review B

  Physical Review B 57 (3), 1607-1619, 1998-01-15

  American Physical Society (APS)

詳細情報

• CRID: 1361981470213189888
• NII論文ID: 30019003421
• NII書誌ID: AA00773566
• DOI: 10.1103/physrevb.57.1607
• ISSN: 10953795
• ISSN: 01631829
• Web Site: http://link.aps.org/article/10.1103/PhysRevB.57.1607
• Web Site: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.1607/fulltext
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