An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)

• A.R. Hefner

収録刊行物

• IEEE Transactions on Power Electronics

  IEEE Transactions on Power Electronics 5 (4), 459-468, 1990-10

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering

詳細情報

• CRID: 1360298761154810880
• NII論文ID: 30019821944
• DOI: 10.1109/63.60690
• ISSN: 19410107
• ISSN: 08858993
• Web Site: http://xplorestaging.ieee.org/ielx3/63/2209/00060690.pdf?arnumber=60690
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  • CiNii Articles