A ferroelectric DRAM cell for high-density NVRAMs

• R. Moazzami

• C. Hu

• W.H. Shepherd

収録刊行物

• IEEE Electron Device Letters

  IEEE Electron Device Letters 11 (10), 454-456, 1990-10

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials

詳細情報

• CRID: 1360576198609542400
• NII論文ID: 30019828468
• DOI: 10.1109/55.62994
• ISSN: 15580563
• ISSN: 07413106
• Web Site: http://xplorestaging.ieee.org/ielx1/55/2299/00062994.pdf?arnumber=62994
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