Surface productions of CF and CF2 radicals in high-density fluorocarbon plasmas

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  • C. Suzuki
    Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
  • K. Sasaki
    Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
  • K. Kadota
    Department of Electronics, Nagoya University, Nagoya 464-8603, Japan

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<jats:p>Spatial distributions of CF and CF2 radical densities in high-density fluorocarbon plasmas were measured by laser-induced fluorescence spectroscopy. In both pulsed and continuous-wave (cw) C4F8 discharges, the radical densities were lower in the center of the discharge and higher near the walls. Namely, hollow-shape profiles of the radical densities were maintained in the C4F8 discharges. This indicates the presence of surface productions of the radicals on the chamber wall. The rf power dependences of the radical fluxes from the wall, which were estimated from the density gradients, showed similar trends to the gas-phase radical densities. This result revealed that the surface productions predominantly determine the gas-phase CF and CF2 radical densities in high-density C4F8 plasmas. In contrast to C4F8, almost uniform profiles of the radical densities were always observed in cw CF4 discharges, while hollow profiles were observed in pulsed CF4 discharges. The CF2 flux from the wall in the pulsed CF4 discharge was one or two orders smaller than that in the C4F8 discharge, and the rf power dependence of the CF2 flux showed a dissimilar trend to the gas phase CF2 density. The large difference in the radical flux from the wall observed in the C4F8 and CF4 discharges suggests that heavy neutral species (CxFy, x⩾2) in the C4F8 plasma make great contributions to the film deposition on the wall where the deposited films enhance the surface productions of CF and CF2 radicals.</jats:p>

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