Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces

• B. S. Swartzentruber

  University of Wisconsin-Madison, Madison, Wisconsin 53706

• Y.-W. Mo

  University of Wisconsin-Madison, Madison, Wisconsin 53706

• M. B. Webb

  University of Wisconsin-Madison, Madison, Wisconsin 53706

• M. G. Lagally

  University of Wisconsin-Madison, Madison, Wisconsin 53706

抄録

Scanning tunneling microscopy observations of several forms of disorder on Si surfaces are presented. These include dimer vacancies on Si(001), step bunches associated with a morphological phase transition on vicinal Si(111), and step structure on vicinal Si(001). A recipe for cleaning of Si surfaces to produce a minimum amount of disorder is presented.

収録刊行物

• Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (4), 2901-2905, 1989-07-01

  American Vacuum Society

キーワード

• Surfaces, Coatings and Films
• Surfaces and Interfaces
• Condensed Matter Physics

詳細情報

• CRID: 1361699993880906496
• NII論文ID: 30020304814
• DOI: 10.1116/1.576167
• ISSN: 15208559
• ISSN: 07342101
• Web Site: https://pubs.aip.org/avs/jva/article-pdf/7/4/2901/12119379/2901_1_online.pdf
• データソース種別:
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  • CiNii Articles