Sputtering yield and radiation damage by neutral beam bombardment

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<jats:p>To clarify the difference between ion beam etching and neutral beam etching, a low-energy (100–1000 eV) Ne0 neutral beam obtained by charge exchange reaction has been used to bombard Cu, Si, and SiO2 surfaces. The sputtering yields of Cu and Si by Ne0 have been found to be the same as those by Ne+. The sputtering yield of SiO2 by Ne0 is slightly smaller than that by Ne+. It is believed that electronic sputtering mechanisms play only a small role in the sputtering of these materials at these low ion energies. C–V measurements show that the amount of radiation damage caused by Ne0 neutral beam bombardment of the SiO2/Si structure is significantly less than that by a Ne+ ion beam. When the Ne+ dosage increases, the flat-band voltage shift increases and the thin SiO2 films on Si eventually break down. In Ne0 neutral bombardment, the flat-band voltage shift saturates with increasing dosage and no breakdown of SiO2 occurs. It is assumed that, in neutral beam bombardment, the surface potential of SiO2 is limited by secondary emission of charged particles whose energies are at most 10–20 eV and the resulting surface potential is not large enough to cause dielectric breakdown.</jats:p>

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