Microfabricated field emission devices using carbon nanofibers as cathode elements

DOI PDF 被引用文献2件
  • M. A. Guillorn
    Molecular-Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6006
  • A. V. Melechko
    Molecular-Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6006
  • V. I. Merkulov
    Molecular-Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6006
  • E. D. Ellis
    Molecular-Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6006
  • M. L. Simpson
    Molecular-Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6006
  • D. H. Lowndes
    Molecular-Scale Engineering and Nanoscale Technologies Research Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6006
  • L. R. Baylor
    Fusion Energy Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831
  • G. J. Bordonaro
    Cornell Nanofabrication Facility, Cornell University, Ithaca, New York 14853

抄録

<jats:p>The digital electrostatic electron beam array lithography concept under development at the Oak Ridge National Laboratory proposes performing direct write electron beam lithography with a massively parallel array of electron emitters operating simultaneously within a digitally programmable microfabricated field emitter array (FEA). Recently we have concentrated our research efforts on the field emission (FE) properties of deterministically grown vertically aligned carbon nanofibers (VACNFs). We have measured the FE properties of isolated VACNFs using a moveable current probe and found that they have low FE turn-on fields and can achieve stable emission for extended periods of time in moderate vacuum. In order to use the VACNF in microfabricated FEA devices we have subjected them to a variety of processing phenomenon including reactive ion etching and plasma enhanced chemical vapor deposition, and found them to be quite robust. Using these processes we have fabricated operational gated cathode structures with single VACNFs cathodes. The issues involved in this fabrication process and the performance of these devices are discussed.</jats:p>

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