Fast proximity effect correction method using a pattern area density map

• Fumio Murai

  Central Research Laboratory, Hitachi Ltd., 185 Kokubunji, Tokyo, Japan

• Haruo Yoda

  Instrument Division, Hitachi Ltd., 312 Katsuta, Ibaraki, Japan

• Shinji Okazaki

  Central Research Laboratory, Hitachi Ltd., 185 Kokubunji, Tokyo, Japan

• Norio Saitou

  Central Research Laboratory, Hitachi Ltd., 185 Kokubunji, Tokyo, Japan

• Yoshio Sakitani

  Instrument Division, Hitachi Ltd., 312 Katsuta, Ibaraki, Japan

抄録

This article proposes a new method for proximity effect correction that utilizes newly developed hardware. The correction algorithm modifies the exposure dose for each exposure point by referring to a pattern area density map. The only additional process in this method is virtual exposure to make the map. The virtual exposure is carried out once at the first use of the large-scale integration circuit pattern and can be processed in only 30 s. The pattern area density map makes it possible to correct the proximity effect from the lower-level patterns by the new map calculated from the two maps of lower level and exposing level. The usefulness of this method is verified by experiments using model patterns.

収録刊行物

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 10 (6), 3072-3076, 1992-11-01

  American Vacuum Society

キーワード

• Electrical and Electronic Engineering
• Condensed Matter Physics

詳細情報

• CRID: 1360574095380300800
• NII論文ID: 30020316204
• NII書誌ID: AA10635106
• DOI: 10.1116/1.585931
• ISSN: 15208567
• ISSN: 10711023
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/10/6/3072/11770960/3072_1_online.pdf
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