Patterning performance of EB-X3 x-ray mask writer

• Shigehisa Ohki

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Toshifumi Watanabe

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Yuji Takeda

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Tetsuo Morosawa

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Kenichi Saito

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Tatsuya Kunioka

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Junichi Kato

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Akira Shimizu

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Tadahito Matsuda

  NTT Telecommunications Energy Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Shinji Tsuboi

  ASET Super-fine SR Lithography Laboratory, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Hajime Aoyama

  ASET Super-fine SR Lithography Laboratory, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Hiroshi Watanabe

  ASET Super-fine SR Lithography Laboratory, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Yoshinori Nakayama

  ASET Super-fine SR Lithography Laboratory, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

抄録

An intensive study of the patterning performance of the EB-X3 revealed that the placement accuracy of a written image was degraded by the thermal effect originating from the temperature difference between the stage and the palette. An optimal writing procedure consisting of two temperature stabilization steps was developed. This procedure enables the EB-X3 to attain an image placement accuracy of better than 10 nm (3σ). A critical dimension control of 7.4 nm (3σ) has been confirmed over a 25-mm-square field.

収録刊行物

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 18 (6), 3084-3088, 2000-11-01

  American Vacuum Society

キーワード

• Electrical and Electronic Engineering
• Condensed Matter Physics

詳細情報

• CRID: 1360581244450592512
• NII論文ID: 30020317880
• DOI: 10.1116/1.1319708
• ISSN: 15208567
• ISSN: 10711023
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/18/6/3084/8204068/3084_1_online.pdf
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