Dramatic work function variations of molecular-beam epitaxially grown GaAs(100) surfaces

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  • R. Duszak
    Bellcore, Red Bank, New Jersey 07701
  • C. J. Palmstro/m
    Bellcore, Red Bank, New Jersey 07701
  • L. T. Florez
    Bellcore, Red Bank, New Jersey 07701
  • Y.-N. Yang
    Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
  • J. H. Weaver
    Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55455

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<jats:p>Work function measurements have been performed on molecular-beam epitaxially (MBE) grown GaAs(100) surfaces prepared using As desorption, Ga deposition, and MBE growth. A comparison of As desorption between As-capped MBE grown surfaces with in situ prepared c(4×4) surfaces suggests that the decapping process cannot yield as well ordered c(4×4) surfaces as MBE growth. Remnant excess As is often observed by scanning tunneling microscope measurements on initially decapped samples. In general, the best ordered surfaces were obtained through preparation techniques which were closest to thermodynamic equilibrium. The highest work function was found for the (2×4)/c(2×8)-β surface prepared by annealing with an As4 flux and the lowest for a (1×6) surface formed by Ga deposition. The total variation was ∼0.82 eV. Rapid annealing and large annealing steps lead to surfaces with less order and lower work function differences.</jats:p>

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