Scanning tunneling microscope and electron beam induced luminescence in quantum wires
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- L. Samuelson
- Department of Solid State Physics, Lund University, Box 118, S-221 00 LUND, Sweden
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- A. Gustafsson
- Department of Solid State Physics, Lund University, Box 118, S-221 00 LUND, Sweden
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- J. Lindahl
- Department of Solid State Physics, Lund University, Box 118, S-221 00 LUND, Sweden
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- L. Montelius
- Department of Solid State Physics, Lund University, Box 118, S-221 00 LUND, Sweden
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- M.-E. Pistol
- Department of Solid State Physics, Lund University, Box 118, S-221 00 LUND, Sweden
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- J.-O. Malm
- National Center for HREM, Department of Inorganic Chemistry 2, Lund University, Box 124, S-221 00 LUND, Sweden
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- G. Vermeire
- University of Gent-IMEC, Department of Information Technology, St-Pietersnieuwstraat 41, B-9000 Gent, Belgium
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- P. Demeester
- University of Gent-IMEC, Department of Information Technology, St-Pietersnieuwstraat 41, B-9000 Gent, Belgium
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<jats:p>Quantum wire structures of GaAs/AlGaAs have been grown by metalorganic vapor phase epitaxy in V grooves using pre-etched corrugated substrates and have been characterized by high-resolution transmission electron microscopy. Low-temperature cathodoluminescence (CL) identifies luminescence peaks with the spatial distributions of the different recombinations, achieving a top view spatial resolution of ≊0.2 μm in the CL images. Principally we report how a scanning tunneling microscope (STM) induces local luminescence in the sample structure, and we spectrally resolve STM-induced luminescence for the tip in different positions relative to the wires. We have recorded the luminescence from a single wire and observed band-filling effects resulting from varying levels of excitation into a wire. We have demonstrated the difference between recombination of electron-hole pairs generated in CL and the recombination of injected holes from the STM tip with a thermalized distribution of accumulated electrons in scanning tunneling luminescence. </jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 12 (4), 2521-2526, 1994-07-01
American Vacuum Society
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詳細情報 詳細情報について
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- CRID
- 1360857674255957760
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- NII論文ID
- 30020321817
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- NII書誌ID
- AA10635106
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- DOI
- 10.1116/1.587795
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- ISSN
- 15208567
- 10711023
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- データソース種別
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