New characterization method of ion current-density profile based on damage distribution of Ga^+ focused-ion beam implantation in GaAs

• BEN ASSAYAG G.

収録刊行物

• J Vac Sci Technol

  J Vac Sci Technol 11 (6), 2420-2426, 1993

詳細情報

• CRID: 1570009750738661888
• NII論文ID: 30020322076
• NII書誌ID: AA10804928
• DOI: 10.1116/1.586998
• データソース種別:
  • CiNii Articles