Etch products from the reaction on Cl2 with Al(100) and Cu(100) and XeF2 with W(111) and Nb

• Harold F. Winters

  IBM Research Laboratory, San Jose, California 95193

Abstract

A modulated-beam, mass spectrometer system has been used to obtain information about etch products, reaction probabilities, and etching mechanisms for the reactions of Cl2 with Al(100) and Cu(100) and for the reaction of XeF2 with W(111) and Nb. The influence of ion bombardment on the etching reaction has also been investigated.

Journal

• Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 3 (1), 9-15, 1985-01-01

  American Vacuum Society

Keywords

• General Engineering

Details

• CRID: 1361699995358367744
• NII Article ID: 30020322235
• NII Book ID: AA10635106
• DOI: 10.1116/1.583301
• ISSN: 23279877
• ISSN: 0734211X
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/3/1/9/11953294/9_1_online.pdf
• Data Source:
  • Crossref
  • CiNii Articles