History of extreme ultraviolet lithography

• Hiroo Kinoshita

  University of Hyogo , 3-1-2 Kouto, Kamigori Ako-gun, Hyogo Pref. 678-1205, Japan

Abstract

Extreme ultraviolet lithography (EUVL) technology was proposed and progressed on both hemispheres in the latter part of the 1980s, independently. Although this technology is a design using a catoptric system instead of refraction lens and the accuracy of subnanometer is demanded for all component engineering, the research and development of Japan and the United States has led to significant breakthroughs in processing and measurement technology over the past 20 years. EUVL is now the most promising next-generation technology for large scale integration fabrication. This article discusses the beginnings of EUVL, what advances are needed, and future prospects.

Journal

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 23 (6), 2584-2588, 2005-11-01

  American Vacuum Society

Keywords

• Electrical and Electronic Engineering
• Condensed Matter Physics

Details

• CRID: 1363951795905134208
• NII Article ID: 30020324075
• DOI: 10.1116/1.2127950
• ISSN: 15208567
• ISSN: 10711023
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/23/6/2584/16103828/2584_1_online.pdf
• Data Source:
  • Crossref
  • CiNii Articles