Proximity effect in electron-beam lithography

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  • T. H. P. Chang
    I.B.M. Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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<jats:p>A simple technique for the computation of the proximity effect in electron-beam lithography is presented. The calculations give results of the exposure intensity received at any given point in a pattern area using a reciprocity principle. Good agreement between the computed results and experimental data was achieved.</jats:p>

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