Study of Deposition Process in Modulated RF Silane Plasma.

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  • Kirimura Hiroya
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Maeda Hiroshi
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Murakami Hiroshi
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Nakahigashi Takahiro
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Ohtani Satoshi
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Tabata Takao
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Hayashi Tsukasa
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Kobayashi Masanao
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Mitsuda Yoshie
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Nakamura Nobuyuki
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Kuwahara Hajime
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615
  • Doi Akira
    Department of Display Devices, R & D Division, Nissin Electric Co., Ltd., 47 Umezu–Takase–cho, Ukyo–ku, Kyoto 615

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Abstract

The influences of plasma parameters on the deposition of a-Si:H film and particle growth have been studied with silane discharge using amplitude-modulated RF methods. Plasma parameters have been measured with the Langmuir probe system and optical emission spectrometer. Behaviors and generation processes of particles have been observed by the laser scattering method. The deposited thin film has been characterized by various techniques such as Fourier-transform infrared (FT-IR) spectrometry, ESR and the constant photocurrent method (CPM). High deposition rate with low particle density as well as high film quality has been realized for a-Si:H film by amplitude-modulated RF methods.

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