Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation.

• Torii Kazuyoshi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185

• Saitoh Sakae

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185

• Ohji Yuzuru

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185

抄録

Lead zirconate titanate thin films have been successfully fabricated by reactive evaporation. Elemental Pb, Zr, and Ti were evaporated in ozone-oxygen mixture ambient. Excellent controls of uniformity of thickness and composition were achieved over a large area (within ± 2% on 4-inch wafer). The electrical properties were examined as a function of Pb content in the films. High dielectric constant (ε ~ 1000) and low leakage current ( 1.7× 10^-7 A/cm²) were realized for the film with stoichiometric composition.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 33 (9B), 5287-5290, 1994

  The Japan Society of Applied Physics

キーワード

• ferroelectric
• reactive evaporation
• thin film
• dielectric constant
• ozone
• leakage current

詳細情報

• CRID: 1390001206246399360
• NII論文ID: 210000035971
• NII論文ID: 30021822426
• NII論文ID: 110003903958
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.33.5287
• COI: 1:CAS:528:DyaK2cXntFegtb4%3D
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.5287
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.5287/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可