Single Electron Device with Asymmetric Tunnel Barriers.

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  • Matsumoto Yoshinari
    Department of Electrical and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350, Japan
  • Hanajiri Tatsuro
    Department of Electrical and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350, Japan
  • Toyabe Tohru
    Department of Information and Computer Science, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350, Japan
  • Sugano Takuo
    Department of Electrical and Electronic Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350, Japan Frontier Research Program, The Institute of Physical and Chemical Research, 2–1 Hirosawa, Wako, Saitama 351–01, Japan

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A single electron device with asymmetric tunnel barriers (ATBs) is proposed, and its operation simulated by computer. Current in the ATB structure is dominated by Fowler-Nordheim tunneling while that in a conventional symmetric tunnel barrier (STB) structure is determined by direct tunneling. Consequently, the ATB has two remarkable advantages over STB. First, the tunnel resistance of ATB depends on the energy of tunneling electron and is determined independently of the barrier capacitance. Second, the tunneling of electrons becomes almost unilateral in ATB and bilateral in STB. These advantages of ATB make it easier to fabricate single electron circuits with high speed, high temperature and low power consumption.

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