Crystal and Electrical Characterizations of Epitaxial Ce_XZr_1-XO₂ Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor

• Hirai Tadahiko

  LSI Laboratories, Asahi Chemical Industry Co., Ltd., 2–1 Samejima, Fuji, Shizuoka 416, Japan

• Nagashima Kazuhito

  The School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo 169, Japan

• Koike Hiroshi

  The School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo 169, Japan

• Matsuno Shinya

  Analytical Research Center, Asahi Chemical Industry Co., Ltd., 2–1 Samejima, Fuji, Shizuoka 416, Japan

• Tarui Yasuo

  The School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo 169, Japan

書誌事項

タイトル別名

• Crystal and Electrical Characterizations of Epitaxial CeXZr1-XO2 Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor.
• Crystal and Electrical Characterization

抄録

We evaluated the crystallinities of Ce _XZr_{1- X}O₂ (X=0.10-0.20) thin films used as intermediate layer for metal/ferroelectric/insulator/semiconductor field effect transistors (MFIS-FETs), using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and X-ray pole figure measurement. The crystal alignments of Ce _XZr_{1- X}O₂ films on Si(100) were Ce_ XZr_{1- X}O₂[100]//Si[100] or Ce_ XZr_{1- X}O₂[100]//Si[001], in the plane. The breakdown field of Ce _XZr_{1- X}O₂ was about 3 MV/cm (at I=1 nA/cm²). From C-V measurements, it was found that the electrical properties of the intermediate layers of the MFIS-FETs were good. Oriented perovskite PbTiO₃ films were deposited on Ce _XZr_{1- X}O₂/Si(100) substrates by digital chemical vapor deposition (CVD). These PbTiO₃ films included many PbTiO₃ grains aligned with the [100] or [001] axis parallel to the [101] axis of the Ce _XZr_{1- X}O₂ crystals at the plane in the PbTiO₃/Ce _XZr_{1- X}O₂ interface. From C-V measurements of an Al/PbTiO₃/Ce _XZr_{1- X}O₂/Si(100) sample, we obtained a threshold hysteresis (memory window) of about 1.4 V.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 35 (9B), 5150-5153, 1996

  The Japan Society of Applied Physics

キーワード

• ferroelectric thin film
• MFS-FET
• PbTiO<SUB> 3</SUB> thin film
• perovskite
• vacuum evaporation
• CVD
• YSZ

詳細情報

• CRID: 1390001206248100864
• NII論文ID: 30021825400
• NII論文ID: 110003955596
• NII論文ID: 210000039788
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.35.5150
• COI: 1:CAS:528:DyaK28XmtlWmtL8%3D
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4060269
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4060269
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.5150
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.5150/pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
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