Verification of Sheath Potential of Processing Plasma in an Electron-Beam-Excited Plasma Apparatus Using a Current Balance Equation.
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- Miyano Ryuichi
- Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
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- Izumi Shinya
- Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
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- Kitada Ryouji
- Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
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- Fujii Motoyuki
- Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
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- Ikezawa Shunjiro
- Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
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- Ito Akihiro
- Center of Engineering Development, CKD Ltd., 3005 Hayasaki, Komaki, Aichi 485, Japan
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抄録
High-density reactive processing plasmas are used to fabricate new materials in electron-beam-excited plasma (EBEP) apparatus, and sheaths have become important in processing plasmas because an ion sheath surrounds the substrates. In order to determine the relationship between the sheath potential and the electron energy distribution function (EEDF), the measured sheath potentials are compared with those calculated using a theoretical current balance equation at the sheath edge in the EBEP, using the experimentally obtained parameters. The results show that monochromatic electron beam current is assumed, and that the profile of the sheath potential depends on the beam potential (E b') at the sheath edge in the plasma.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (4B), 2427-2432, 1996
The Japan Society of Applied Physics
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キーワード
詳細情報
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- CRID
- 1390282681223671040
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- NII論文ID
- 210000039171
- 110003955393
- 30021825991
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可