Verification of Sheath Potential of Processing Plasma in an Electron-Beam-Excited Plasma Apparatus Using a Current Balance Equation.

  • Miyano Ryuichi
    Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
  • Izumi Shinya
    Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
  • Kitada Ryouji
    Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
  • Fujii Motoyuki
    Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
  • Ikezawa Shunjiro
    Department of Electronic Engineering, College of Engineering, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487, Japan
  • Ito Akihiro
    Center of Engineering Development, CKD Ltd., 3005 Hayasaki, Komaki, Aichi 485, Japan

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High-density reactive processing plasmas are used to fabricate new materials in electron-beam-excited plasma (EBEP) apparatus, and sheaths have become important in processing plasmas because an ion sheath surrounds the substrates. In order to determine the relationship between the sheath potential and the electron energy distribution function (EEDF), the measured sheath potentials are compared with those calculated using a theoretical current balance equation at the sheath edge in the EBEP, using the experimentally obtained parameters. The results show that monochromatic electron beam current is assumed, and that the profile of the sheath potential depends on the beam potential (E b') at the sheath edge in the plasma.

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