Printing Sub-100 Nanometer Features Near-field Photolithography.

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  • Tanaka Shuji
    Department of Engineering Synthesis, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Nakao Masayuki
    Department of Engineering Synthesis, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Hatamura Yotaro
    Department of Engineering Synthesis, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Komuro Masanori
    Electrotechnical Laboratory, Ministry of International Trade and Industry, 1–1–4 Umezono, Tsukuba, Ibaragi 305–8568, Japan
  • Hiroshima Hiroshi
    Electrotechnical Laboratory, Ministry of International Trade and Industry, 1–1–4 Umezono, Tsukuba, Ibaragi 305–8568, Japan
  • Hatakeyama Masahiro
    Ebara Research Co., Ltd., 4–2–1 Honfujisawa, Fujisawa, Kanagawa 251–8502, Japan

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In this paper, a near-field photolithographic method which can realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100 nm features on a commercially available photoresist using 442-nm-wavelength light.

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