Infrared Radiation Detector with YBa<sub>2</sub>Cu<sub>3</sub>O<sub>X</sub> Thin Film

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  • Kakehi Yoshiharu
    Technology Research Institute of Osaka Prefecture, 2–7–1 Ayumino, Izumi, Osaka 594–1157, Japan
  • Yotsuya Tsutom
    Technology Research Institute of Osaka Prefecture, 2–7–1 Ayumino, Izumi, Osaka 594–1157, Japan
  • Kusaka Tadaoki
    Technology Research Institute of Osaka Prefecture, 2–7–1 Ayumino, Izumi, Osaka 594–1157, Japan
  • Suzuki Yoshihiko
    Technology Research Institute of Osaka Prefecture, 2–7–1 Ayumino, Izumi, Osaka 594–1157, Japan
  • Ogawa Souichi
    Technology Research Institute of Osaka Prefecture, 2–7–1 Ayumino, Izumi, Osaka 594–1157, Japan
  • Imokawa Hirofumi
    Tatsuta Electric Wire & Cable Co., Ltd., 2–3–1 Iwata–cho, Higashi–Osaka 578–0941, Japan

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タイトル別名
  • Infrared Radiation Detector with YBa2Cu3OXThin Film.
  • Infrared Radiation Detector with YBa2Cu

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抄録

We investigated an infrared (IR) radiation detector using a c-axis oriented YBa2Cu3OX thin film with a microbridge structure. The photoresponse was measured under IR radiation and was found to depend on the bias current. A bolometric response was observed under relatively low bias current, which was inversely proportional to the square root of the modulation frequency of IR irradiation. The frequency dependence can be explained by a heat diffusion process that is similar to that of a microbolometer. With increasing bias current, a nonbolometric response was observed just above the superconducting transition temperature (Tc). This was caused by the enhancement of additional flux creep induced by modulated IR light, which was equivalent to an increase in resistance. The maximum responsivity and noise equivalent power (NEP) were 1.7×104 V/W and 2.1×10-14 W/Hz1/2, respectively.

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