A New Fabrication Process for Low-Loss Millimeter-Wave Transmission Lines on Silicon.

DOI Web Site Web Site Web Site 被引用文献7件 参考文献22件
  • Ishii Hiromu
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Sahri Nabil
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Nagatsuma Tadao
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Machida Katsuyuki
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Saito Kunio
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Yagi Shouji
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Yano Masaki
    NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Kudo Kazuhisa
    NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Kyuragi Hakaru
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

書誌事項

タイトル別名
  • New Fabrication Process for Low Loss Millimeter Wave Transmission Lines on Silicon

この論文をさがす

抄録

The new type of coplanar waveguide for millimeter-wave transmission was fabricated on silicon by chemical mechanical polishing and selective electroplating processes based on silicon technology. The thick interconnections obtained using these processes have less conductor loss than the conventional interconnections, and the deep grooves on both sides of a signal line in this new waveguide reduce the dielectric loss caused by the high permittivity of the silicon substrate. The electro-optic sampling technique confirmed that the new waveguide has excellent millimeter-wave propagation characteristics, low effective permittivity and low attenuation, at frequencies up to 300 GHz. The new fabrication processes should be useful in combining millimeter-wave systems with ultralarge-scale integrated circuits on silicon.

収録刊行物

被引用文献 (7)*注記

もっと見る

参考文献 (22)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ