Surface and Interface Study of Titanium Nitride on Si Substrate Produced by Dynamic Ion Beam Mixing Method.

• Beag Young Whoan

  Department of Applied Physics, Osaka University, Suita, Osaka 565

• Tarutani Masayoshi

  Department of Applied Physics, Osaka University, Suita, Osaka 565

• Min Kyung–youl

  Department of Applied Physics, Osaka University, Suita, Osaka 565

• Kiuchi Masato

  Government Industrial Research Institute, Osaka, Ikeda, Osaka 563

• Shimizu Ryuichi

  Department of Applied Physics, Osaka University, Suita, Osaka 565

抄録

Crystal growth of TiN on Si substrate under dynamic ion beam mixing (DIBM) processing was monitored by reflection high-energy electron diffraction (RHEED) and the interface was studied by transmission electron microscope (TEM). The TEM observation has revealed that the intermixed layer between the Si substrate and TiN film is composed of three different types of sublayers. The thicknesses of the first and the second sublayers were same as ~ 7-8 nm and ~ 3-4 nm, respectively, independent of different arrival ratios of Ti/N. The thickness of the third layer, however, was ~ 6 nm for the arrival ratio of nearly unity whereas it was ~ 14 nm for the arrival ratio greater than unity. Characterization of these sublayers with a field-emission analytical electron microscope (AEM) has revealed that these three sublayers are of an amorphous structure, composed of a mixture of Si and N, of a mixture of Si, N and small amount of recoil-implanted Ti, and of a mixture of Si, N, and Ti, for the 1st, 2nd and 3rd sublayers, respectively. TiN (001) is epitaxially grown on Si (001) along the incident direction of nitrogen ions even though the intermixed layer exists inbetween the TiN film and Si substrate.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 33 (4A), 2025-2030, 1994

  The Japan Society of Applied Physics

キーワード

• dynamic ion beam mixing
• TEM
• RHEED
• AEM
• intermixed layer
• energy-dispersive X-ray spectroscopy
• amorphous sublayer
• microcrystal

詳細情報

• CRID: 1390001206246888576
• NII論文ID: 210000035255
• NII論文ID: 30021835754
• NII論文ID: 110003903157
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.33.2025
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.2025
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.33.2025/pdf
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可