Sodium Contamination in SiO₂ Films Induced by Plasma Ashing

• Hideo Akiya

• Kazuyuki Saito

• Kenji Kobayashi

抄録

A sodium contamination phenomenon in a SiO 2 film caused by O 2 plasma ashing of a resist film was studied using the triangular voltage sweep method and neutron activation analysis. The contaminant sodium atoms have been proven to come from the resist film. The contamination occurs in two stages: (i) Before ashing end point, the sodium atoms dissolve only in the SiO 2 surface layer by 10 12 cm -2 surface area density or less. (ii) After the endpoint, the sodium amount in the SiO 2 film increases markedly and eventually saturates at 10 13 –10 14 cm -2 . The sodium atoms in the SiO 2 film migrate toward the SiO 2 /Si interface during over-ashing in O 2 plasma. Ashing both in O 2 -CF 4 plasma and in a metal shield cylinder are effective in reducing the sodium transportation rate and in preventing contamination.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 20 (3), 647-, 1981-03-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847871767607296
• NII論文ID: 110003981859
• NII論文ID: 30021845002
• NII書誌ID: AA00690800
• DOI: 10.1143/jjap.20.647
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.20.647
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.20.647/pdf
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