Reflection electron microscope observations of dislocations and surface structure phase transition on clean(111)silicon surfaces.

• Osakabe Nobuyuki

  Physics Department, Tokyo Institute of Technology

• Yagi Katsumichi

  Physics Department, Tokyo Institute of Technology

• Honjo Goro

  Physics Department, Tokyo Institute of Technology

Abstract

A recently reported surface study by means of ultra-high-vacuum reflection electron microscopy (Osakabe et al.: Surf. Sci. in press) was extended to further details of clean (111) silicon surfaces. A screw dislocation emergent at the surface was clearly identified as the place at which one surface step terminates with a characteristic line contrast. In the transformation between the (7×7) and (1×1) surface structures across 830°C, the surface steps act as nucleation sites : on cooling the (7×7) structure nucleates at the upper edge of the steps and grows along the upper terraces, while on heating the reversed process takes place.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 19 (6), L309-L312, 1980

  The Japan Society of Applied Physics

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1390282681232970496
• NII Article ID: 110003896604
• NII Article ID: 30021845813
• NII Article ID: 210000020604
• NII Article ID: 130003462845
• NII Book ID: AA10650595
• DOI: 10.1143/jjap.19.l309
• COI: 1:CAS:528:DyaL3cXltlygtL0%3D
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.19.L309
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.19.L309/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed