Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl₅

• Satoshi Tanimoto

• Masahiro Matsui

• Minoru Aoyagi

• Koichi Kamisako

• Koichi Kuroiwa Koichi Kuroiwa

• Yasuo Tarui Yasuo Tarui

Abstract

A new UV photo-CVD is developed to fabricate thin films of high-dielectric-constant Ta 2 O 5 . The significant features of the new photo-CVD are the UV 254 nm irradiation and the use of pure O 3 as an oxidant source. The as-grown films obtained at a low deposition temperature of 300°C show very low leakage current and remarkably good step coverage. UV irradiation during CVD is essential to improve the resistivity and dielectric breakdown strength of the film. This CVD method and understanding of the related mechanism may be applicable to fabrication technology of future VLSI's.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (3A), L330-, 1991-03-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566396794514432
• NII Article ID: 30021859322
• NII Article ID: 210000031548
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.30.l330
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.30.L330
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.30.L330/pdf
• Data Source:
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  • CiNii Articles